Title :
DC and microwave properties of 0.5 μm AlGaN/GaN high electron mobility transistors fabricated on 2-inch process line
Author :
Hilsenbeck, J. ; Lenk, F. ; Lossy, R. ; Würfl, J. ; Köhler, K. ; Obloh, H.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
DC and RF characteristics of AlGaN/GaN HEMTs processed by 2-inch stepper lithography are presented. The devices, grown by MOVPE on 2" sapphire wafers consist of: GaN buffer, Al0.25Ga0.75 N spacer, doped Al0.25Ga0.75N supply layer, Al0.25Ga0.75N barrier, GaN cap. Refractory source and gate contacts along with mesa isolation and air bridge technology are applied. Typical values for maximum saturation current, transconductance and pinch-off voltage are: 616 m/A/mm, 203 mS/mm, -3.5 V with very good homogeneity across 2". The cut off frequencies fT and fmax are 24 and 54 GHz respectively. A standard small signal equivalent circuit model exactly describes DC- and microwave properties
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; high electron mobility transistors; lithography; microwave field effect transistors; semiconductor epitaxial layers; vapour phase epitaxial growth; wide band gap semiconductors; 2-inch stepper lithography; Al2O3; AlGaN-GaN; DC characteristics; HEMT; MOVPE; RF characteristics; air bridge technology; mesa isolation; microwave properties; pinch-off voltage; sapphire wafers; saturation current; small signal equivalent circuit model; transconductance; Aluminum gallium nitride; Electrons; Epitaxial growth; Epitaxial layers; Gallium nitride; HEMTs; Lithography; MODFETs; Microwave devices; Radio frequency;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947181
