DC and microwave properties of 0.5 μm AlGaN/GaN high electron mobility transistors fabricated on 2-inch process line

Author

Hilsenbeck, J. ; Lenk, F. ; Lossy, R. ; Würfl, J. ; Köhler, K. ; Obloh, H.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany

fYear

2000

fDate

2000

Firstpage

351

Lastpage

356

Abstract

DC and RF characteristics of AlGaN/GaN HEMTs processed by 2-inch stepper lithography are presented. The devices, grown by MOVPE on 2" sapphire wafers consist of: GaN buffer, Al_0.25Ga_0.75N spacer, doped Al_0.25Ga_0.75N supply layer, Al_0.25Ga_0.75N barrier, GaN cap. Refractory source and gate contacts along with mesa isolation and air bridge technology are applied. Typical values for maximum saturation current, transconductance and pinch-off voltage are: 616 m/A/mm, 203 mS/mm, -3.5 V with very good homogeneity across 2". The cut off frequencies f_T and f_max are 24 and 54 GHz respectively. A standard small signal equivalent circuit model exactly describes DC- and microwave properties

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; high electron mobility transistors; lithography; microwave field effect transistors; semiconductor epitaxial layers; vapour phase epitaxial growth; wide band gap semiconductors; 2-inch stepper lithography; Al₂O₃; AlGaN-GaN; DC characteristics; HEMT; MOVPE; RF characteristics; air bridge technology; mesa isolation; microwave properties; pinch-off voltage; sapphire wafers; saturation current; small signal equivalent circuit model; transconductance; Aluminum gallium nitride; Electrons; Epitaxial growth; Epitaxial layers; Gallium nitride; HEMTs; Lithography; MODFETs; Microwave devices; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947181

Filename

947181