Title :
How Many Gates do we Need in a Transistor?
Author :
Cristoloveanu, Sorin
Author_Institution :
Inst. of Microelectron., CNRS-NPG-UJF) INP Grenoble - Minatec, Grenoble
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
The migration from single-gate to multiple- gate SOI transistors is inexorable but still includes a number of hesitations and dilemmas. In this context, we review the main motivations, technological achievements, physics-related implications and future challenges. Specific aspects governing the operation of multiple-gate transistors are discussed with the aim of clarifying the strategic trends. The physics mechanisms are briefly evoked. The road is difficult with many turns; hopefully, it looks long enough. Generic milestones are: nano-size, multiple-gates, innovative ideas and multi-facet SOI technology.
Keywords :
MOSFET; silicon-on-insulator; MOSFET; SOI transistors; multiple-gate transistors; strategic trends; Crystalline materials; Doping; Electrostatics; FinFETs; Logic functions; MOSFET circuits; Microelectronics; Photonics; Semiconductor films; Silicon on insulator technology; MOSFET; SOI; coupling effects; multiple gates; volume inversion;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519636