Title :
Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence
Author :
Green, D.S. ; Heikman, S. ; Heying, B. ; Tavernier, P.R. ; Speck, J.S. ; Clarke, D.R. ; Den Baars, S.P. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
The epitaxial growth of InGaN was investigated by molecular beam epitaxy (MBE) on GaN templates grown by metal-organic chemical vapor deposition (MOCVD). Structural and optical properties of bulk InGaN and multiple quantum well (MQW) InGaN/GaN heterostructures were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence spectroscopy (PL). XRD measurements found InGaN bulk and heterostructure compositions to be consistent. The MQW films showed peak PL positions > 550 nm. The advantage of reducing template dislocation density was studied
Keywords :
III-V semiconductors; X-ray diffraction; atomic force microscopy; dislocation density; gallium compounds; indium compounds; interface structure; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; semiconductor superlattices; wide band gap semiconductors; 550 nm; AFM; GaN templates; InGaN; InGaN-GaN; InGaN/GaN heterostructures; MBE; MOCVD; MQW; X-ray diffraction; XRD; atomic force microscopy; composition; epitaxial growth; green luminescence; metal-organic chemical vapor deposition; molecular beam epitaxy; multiple quantum well; optical properties; peak PL positions; photoluminescence spectroscopy; structural properties; template dislocation density; Atom optics; Atomic force microscopy; Chemical vapor deposition; Epitaxial growth; Gallium nitride; Molecular beam epitaxial growth; Optical films; Optical microscopy; Quantum well devices; X-ray scattering;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947184
