Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence

Author

Green, D.S. ; Heikman, S. ; Heying, B. ; Tavernier, P.R. ; Speck, J.S. ; Clarke, D.R. ; Den Baars, S.P. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2000

fDate

2000

Firstpage

371

Lastpage

376

Abstract

The epitaxial growth of InGaN was investigated by molecular beam epitaxy (MBE) on GaN templates grown by metal-organic chemical vapor deposition (MOCVD). Structural and optical properties of bulk InGaN and multiple quantum well (MQW) InGaN/GaN heterostructures were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence spectroscopy (PL). XRD measurements found InGaN bulk and heterostructure compositions to be consistent. The MQW films showed peak PL positions > 550 nm. The advantage of reducing template dislocation density was studied

Keywords

III-V semiconductors; X-ray diffraction; atomic force microscopy; dislocation density; gallium compounds; indium compounds; interface structure; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; semiconductor superlattices; wide band gap semiconductors; 550 nm; AFM; GaN templates; InGaN; InGaN-GaN; InGaN/GaN heterostructures; MBE; MOCVD; MQW; X-ray diffraction; XRD; atomic force microscopy; composition; epitaxial growth; green luminescence; metal-organic chemical vapor deposition; molecular beam epitaxy; multiple quantum well; optical properties; peak PL positions; photoluminescence spectroscopy; structural properties; template dislocation density; Atom optics; Atomic force microscopy; Chemical vapor deposition; Epitaxial growth; Gallium nitride; Molecular beam epitaxial growth; Optical films; Optical microscopy; Quantum well devices; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947184

Filename

947184