• DocumentCode
    3437506
  • Title

    Design of High Speed Ternary Full Adder and Three-Input XOR Circuits Using CNTFETs

  • Author

    Murotiya, S.L. ; Gupta, A.

  • Author_Institution
    Electr. & Electron. Dept., Birla Inst. of Technol. & Sci., Pilani, India
  • fYear
    2015
  • fDate
    3-7 Jan. 2015
  • Firstpage
    292
  • Lastpage
    297
  • Abstract
    This paper proposes a new high speed ternary full adder (TFA) cell for carbon nano tube field effect transistor (CNTFET) technology. The proposed design has a symmetric pull-up and pull-down networks along with a resistive voltage divider as its integral part, which is configured using transistors. The design takes inputs through a decoding unit and uses ternary nature of A & B but inherent binary nature of Cin leading to simplicity in design. The design demonstrates high driving power and robustness in terms of insusceptibility to voltage and temperature variations. The sum generation unit of proposed design is further modified for achieving an energy efficient three-input ternary XOR circuit which can be used as a basic cell in modern circuit design. Hspice simulation results with 32nm Stanford CNTFET model show 49% reduction in delay with 19% progress in power-delay product (PDP) for the proposed TFA and 43% reduction in delay with 48 % improvement in PDP for the proposed three input ternary XOR circuit in comparison with the CNTFET-based designs, recently published in the literature.
  • Keywords
    adders; carbon nanotube field effect transistors; logic design; logic gates; voltage dividers; CNTFET technology; PDP; Stanford CNTFET model; carbon nano tube field effect transistor technology; decoding unit; energy efficient three-input ternary XOR circuit; high speed TFA cell; high speed ternary full adder cell; power-delay product; pull-down networks; resistive voltage divider; size 32 nm; sum generation unit; symmetric pull-up networks; temperature variations; voltage variations; Adders; CNTFETs; Delays; Generators; Logic gates; Simulation; Carbon nano tube (CNT) field effect transistor (CNTFET); Power-delay product (PDP); Ternary XOR; Ternary full adder (TFA); Ternary logic;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design (VLSID), 2015 28th International Conference on
  • Conference_Location
    Bangalore
  • ISSN
    1063-9667
  • Type

    conf

  • DOI
    10.1109/VLSID.2015.56
  • Filename
    7031749