Title :
Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics
Author :
Ogawa, Ennis T. ; Kim, Jinyoung ; Haase, Gad S. ; Mogul, Homi C. ; McPherson, Joe W.
Author_Institution :
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
fDate :
30 March-4 April 2003
Abstract :
The reliability physics of low-k interconnect dielectrics is of great interest. Leakage, breakdown and TDDB data are presented for fluorinated silica, porous carbon-doped silica, and very porous carbon-doped silica. The breakdown and TDDB performance of the dielectrics are observed to degrade with the degree of porosity but the failure kinetics (field acceleration parameter and activation energy) seem to rather insensitive to porosity. A percolation model has been developed whereby the pores are treated as defects. The percolation model seems to describe well the observed breakdown and TDDB behavior.
Keywords :
CVD coatings; Monte Carlo methods; dielectric thin films; electric breakdown; integrated circuit interconnections; integrated circuit reliability; leakage currents; percolation; porosity; porous materials; silicon compounds; CVD films; Cu; Monte Carlo simulation; SiO2; SiOC; SiOF; TDDB performance; activation energy; breakdown data; current leakage; defects; dielectric reliability; failure kinetics; field acceleration parameter; interdigitated comb-serpent structure; intermetal dielectrics; intralevel dielectrics; leakage data; percolation model; porosity; porous low-k silica-based interconnect dielectrics; ramped breakdown; reliability physics; time-dependent dielectric breakdown; Degradation; Dielectric breakdown; Dielectric constant; Dielectric materials; Electric breakdown; Instruments; Materials reliability; Physics; Polarization; Silicon compounds;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197739
