The influence of rapid thermal annealing on InAsP/InP strained multiple quantum well laser diodes grown by metalorganic vapor phase epitaxy

Author

Wang, Wei-Han ; Lee, Chong-Yi ; Tian, Ya-De ; Shih, Tian-Tsorbng

Author_Institution

Telecommun. Labs., Chunghwa Telecom Co. Ltd., Taoyuan, Taiwan

fYear

2000

fDate

2000

Firstpage

407

Lastpage

411

Abstract

We have demonstrated that the threshold current of InAsP/InP strained multiple quantum well ridge-waveguide (RWG) LDs decreased significantly by applying an optimal post-growth rapid thermal annealing procedure. It was found that the PL peak wavelengths of the InAsP/InP SSQW stack only slightly shifted of 1-4 nm and the FWHMs remained almost unaffected after 700°C RTA, indicating that interdiffusion of group-V elements did not damage the device structures

Keywords

III-V semiconductors; MOCVD; chemical interdiffusion; indium compounds; photoluminescence; quantum well lasers; rapid thermal annealing; ridge waveguides; semiconductor growth; semiconductor superlattices; spectral line breadth; spectral line shift; vapour phase epitaxial growth; waveguide lasers; 700 C; FWHM; InAsP-InP; InAsP/InP SSQW stack; InAsP/InP strained multiple quantum well laser diodes; InAsP/InP strained multiple quantum well ridge-waveguide; PL peak wavelengths; RTA; interdiffusion; metalorganic vapor phase epitaxy; optimal post-growth rapid thermal annealing procedure; rapid thermal annealing; threshold current; Conducting materials; Diode lasers; Epitaxial growth; Indium phosphide; Laboratories; Optical materials; Optical waveguides; Rapid thermal annealing; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947190

Filename

947190