High Frequency Devices based on Graphene

Author

Dragoman, M. ; Dragoman, D. ; Muller, A.A.

Author_Institution

Nat. Inst. for R&D in Microtechnol., Bucharest

Volume

1

fYear

2007

fDate

Oct. 15 2007-Sept. 17 2007

Firstpage

53

Lastpage

56

Abstract

Graphene is a native one-atom-thick crystal consisting of a single sheet of carbon atoms. In this material, discovered in 2005, the electron transport is ballistic at room temperature and is described by a relativistic-like quantum Dirac equation instead of a Schrodinger equation. Also, graphene has a Young modulus of 1.5 TPa. Due to these unique properties, graphene is very promising for high frequency nanoelectronic devices, such as oscillators and switches. In this paper, we show that a single graphene barrier is a switch with a very high on-off ratio, which has a large differential negative resistance beyond 1 THz. Also, we show that graphene is a very efficient RF-NEMS switch for microwave applications.

Keywords

carbon; elemental semiconductors; microswitches; microwave switches; nanoelectronics; nanostructured materials; narrow band gap semiconductors; semiconductor switches; C; RF-NEMS switch; differential negative resistance; gapless semiconductor; graphene-based device; high frequency device; microwave application; nanoelectronic device; single graphene barrier switch; Crystalline materials; Electrons; Frequency; Microwave oscillators; Nanoscale devices; Schrodinger equation; Sheet materials; Switches; Temperature; Young´s modulus;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2007. CAS 2007. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-0847-4

Type

conf

DOI

10.1109/SMICND.2007.4519646

Filename

4519646