Factors determining the external quantum efficiency of AlGaInP microcavity light-emitting diodes

Author

Royo, P. ; Stanley, R.P. ; Ilegems, M. ; Streubel, K. ; Gulden, K.H.

Author_Institution

Inst. de Micro- et Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland

fYear

2000

fDate

2000

Firstpage

425

Lastpage

429

Abstract

A detailed study of external quantum efficiency is reported for AlGaInP-based microcavity light-emitting diodes. By comparing numerical simulations with angle-resolved spectral measurements, the extraction efficiency could be accurately determined. This allowed precise calculation of the internal quantum efficiency. By using a simple model, we could identify the contributions of radiative and injection efficiencies to the internal quantum efficiency. We showed that the injection efficiency was limited by poor confinement of the electrons in the active region

Keywords

Fabry-Perot resonators; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; AlGaInP; LED; angle-resolved spectral measurements; external quantum efficiency; extraction efficiency; injection efficiency; microcavity light-emitting diodes; numerical simulations; radiative efficiency; Current density; Current measurement; Density measurement; Electrons; Fabry-Perot; Light emitting diodes; Mesh generation; Microcavities; Pulse measurements; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947193

Filename

947193