• DocumentCode
    3437833
  • Title

    Low temperature transport of n-type gallium nitride

  • Author

    Chong, G. ; Reed, M.A. ; Gaffey, B. ; Gheriasmova, M. ; Mitev, P.H. ; Guido, L.J.

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    479
  • Lastpage
    484
  • Abstract
    We measured the electrical conductivity of 1-2 μm thick n-type intentionally and unintentionally doped gallium nitride samples from 1.5 to 290 K. Room-temperature Hall measurements show carrier densities in the range of 6.6×1016 to 3.7×1018 cm -3, and mobility values from 543 to 261 cm2/V-sec over this carrier density range. Hopping is among impurity sites, and the hopping distance increases with decreasing doping concentration for the silicon-doped samples
  • Keywords
    III-V semiconductors; carrier density; carrier mobility; electrical conductivity; gallium compounds; hopping conduction; wide band gap semiconductors; 1 to 2 mum; 1.5 to 290 K; Hall measurements; carrier densities; electrical conductivity; hopping distance; impurity sites; low temperature transport; Charge carrier density; Conductivity measurement; Density measurement; Doping; Electric variables measurement; Gallium nitride; III-V semiconductor materials; Impurities; Temperature; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2000 IEEE International Symposium on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-6258-6
  • Type

    conf

  • DOI
    10.1109/ISCS.2000.947202
  • Filename
    947202
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3437833