A physical model of time-dependent dielectric breakdown in copper metallization

Author

Wu, Wen ; Duan, Xiaodong ; Yuan, J.S.

Author_Institution

Chip Design & Reliability Lab., Central Florida Univ., Orlando, FL, USA

fYear

2003

fDate

30 March-4 April 2003

Firstpage

282

Lastpage

286

Abstract

A physical model of copper interconnect dielectric breakdown is studied. The general continuity equation about Cu⁺ diffusion and drift is evaluated. An analytical expression to predict the lifetime of TDDB is developed. The model predictions agree well with the experimental data at different electric fields and temperatures. The lifetime is proportional to the exponential of electric field under an acceleration stress and consistent with the "E\´ model.

Keywords

copper; electric breakdown; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; Cu; Cu⁺ diffusion; Cu⁺ drift; E model; TDDB lifetime; acceleration stress; analytical expression; copper interconnect dielectric breakdown; copper metallization; electric field exponential; general continuity equation; physical model; time-dependent dielectric breakdown; Copper; Degradation; Dielectric breakdown; Dielectric materials; Equations; Integrated circuit interconnections; Ionization; Leakage current; Metallization; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International

Print_ISBN

0-7803-7649-8

Type

conf

DOI

10.1109/RELPHY.2003.1197758

Filename

1197758