A 200-MHz crystal oscillator with 0.5 ppm long term stability

Author

Brigati, Simona ; Francesconi, Fabrizio ; Maloberti, Franco

Author_Institution

Dipartimento di Elettronica, Pavia Univ., Italy

Volume

1

fYear

1996

fDate

13-16 Oct 1996

Firstpage

164

Abstract

This paper presents the design of a crystal oscillator with very high long term stability. It operates up to more than 200 MHz and is particularly suitable for telecommunication apparatus. The circuit, realised in a high-speed 7 GHz-f_T 1.2 μm BiCMOS technology, includes a core oscillator with Automatic Gain Control (AGC) and two high-speed sinusoidal-to-CMOS and sinusoidal-to-ECL interfaces. Experimental measurements show an excellent long term stability over a wide temperature range of operation

Keywords

BiCMOS analogue integrated circuits; automatic gain control; circuit stability; crystal oscillators; integrated circuit design; 1.2 micron; 200 MHz; AGC; BiCMOS technology; core oscillator; crystal oscillator; long term stability; sinusoidal-to-CMOS interface; sinusoidal-to-ECL interface; telecommunication apparatus; BiCMOS integrated circuits; Circuit noise; Circuit stability; Clocks; Control systems; Frequency conversion; Gain control; Oscillators; Power supplies; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on

Conference_Location

Rodos

Print_ISBN

0-7803-3650-X

Type

conf

DOI

10.1109/ICECS.1996.582743

Filename

582743