Impurities in IBAD processes

Author

Kiuchi, M. ; Ensinger, W. ; Alberts, L. ; Enders, B. ; Wolf, G.K.

Author_Institution

Osaka Nat.. Res. Inst., Japan

Volume

2

fYear

1999

fDate

36495

Firstpage

1029

Abstract

Impurities in IBAD processes were discussed using radioactivation analysis with thermal neutrons. IBAD processes are useful for hard coatings. In this process, an ion source without a mass separator is normally used. So, contamination by filaments and electrodes is possible but had not been considered. We then studied impurities in Si films deposited with simultaneous Ar or N₂ ion beam irradiation. The samples were activated by thermal neutron irradiation in a reactor to detect γ-ray emission. It was revealed that the electrode contaminated the film but the filament did not. It was also revealed that the atmosphere in the process was contained in the film. Impurities with vapor pressure were reduced with an ion irradiation

Keywords

elemental semiconductors; impurity distribution; ion beam assisted deposition; neutron activation analysis; semiconductor growth; semiconductor thin films; silicon; γ-ray emission; Ar; Ar ion beam irradiation; IBAD processes; N₂; N₂ ion beam irradiation; Si; Si films; contamination; electrodes; filaments; hard coatings; impurities; ion irradiation; ion source; radioactivation analysis; thermal neutron irradiation; thermal neutrons; vapor pressure; Argon; Coatings; Contamination; Electrodes; Impurities; Ion beams; Ion sources; Neutrons; Particle separators; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813855

Filename

813855