1/f noise degradation caused by Fowler-Nordheim tunneling stress in MOSFETs

Author

Toita, M. ; Sugawa, S. ; Teramoto, A. ; Akaboshi, T. ; Imai, H. ; Ohmi, T.

Author_Institution

Manage. of Sci. & Technol. Dept, Tohoku Univ., Sendai, Japan

fYear

2003

fDate

30 March-4 April 2003

Firstpage

313

Lastpage

317

Abstract

We focus on 1/f noise appearing in MOSFETs. In wafer fabrication, plasma discharges are often used for processes such as etching, photoresist ashing and plasma enhanced CVD. After gate electrode formation, an electrical field higher than the device operation limit might be applied between the gate and substrate because of so-called plasma damage. Such high field stress can result in a significant increase in low frequency noise in MOSFETs. The purpose of this work is to investigate in detail the degradation of 1/f noise levels caused by Fowler-Nordheim tunneling stress.

Keywords

1/f noise; MOSFET; semiconductor device noise; semiconductor device reliability; sputter etching; tunnelling; 1/f noise degradation; Fowler-Nordheim tunneling stress; MOSFETs; border traps; device operation limit; electrical field; etching; gate electrode formation; high field stress; low frequency noise; photoresist ashing; plasma damage; plasma discharge; plasma enhanced CVD; wafer fabrication processes; Degradation; Electrodes; Etching; Fabrication; MOSFETs; Plasma applications; Plasma devices; Resists; Stress; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International

Print_ISBN

0-7803-7649-8

Type

conf

DOI

10.1109/RELPHY.2003.1197764

Filename

1197764