Simulation Experiment on 4H-SiC Millimeter-Wave Photo-Illuminated High Power Impatt Oscillator

Author

Mukherjee, M. ; Mazumder, N. ; Goswami, K.

Author_Institution

Dept. of Appl. Phys., Visva Bharati Univ., Kolkata

Volume

1

fYear

2007

fDate

Oct. 15 2007-Sept. 17 2007

Firstpage

203

Lastpage

206

Abstract

Simulation experiments on Si, InP and wide band gap 4H-SiC based single drift IMPATT diodes operating at Ka-band clearly show the advantage of the SiC material system. RF power of 200 W with 10-15% efficiency at Ka-band can be expected from the 4HsiC based diodes. The effect of photo-illumination on 4H-SiC IMPATT is investigated by studying the role of enhanced saturation current on the mm-wave performance of the device. Under photo-illumination, (i) the negative conductance and (ii) the negative resistance of the device decrease, while, the frequency of operation and the device quality factor shift upward. The study indicates SiC IMPATT is a promising opto-sensitive high power mm-wave source.

Keywords

microwave oscillators; millimetre wave oscillators; optoelectronic devices; silicon compounds; wide band gap semiconductors; SiC; device quality factor shift upward; millimeter-wave photoilluminated high power IMPATT oscillator; optosensitive high power mm-wave source; power 200 W; wide band gap; Indium phosphide; Leakage current; Optical transmitters; Oscillators; Physics; Q factor; Radio frequency; Semiconductor diodes; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2007. CAS 2007. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-0847-4

Type

conf

DOI

10.1109/SMICND.2007.4519681

Filename

4519681