Title :
Contact Physics of Capacitive Interconnects
Author :
Malucci, Robert D. ; Panella, Augusto P.
Author_Institution :
Molex Inc. Lisle, Lisle
Abstract :
The resistance and capacitance of a typical multi-point contact interface has been used to assess the impact on high frequency signal integrity. In the past it was shown how fully degraded interfaces can still provide acceptable performance for high data rate signal transfers. In the case of fully degraded contacts, signals were shown to transfer by capacitive coupling and wave propagation. This paper focuses on the critical parameters of a capacitive coupled interface. Moreover, the physics of the contact interface is related to contacts that rely on capacitive (as opposed to metallic) coupling and electronic tunneling. These results help define the physics and design requirements for capacitive coupling. In addition, critical performance parameters such as real contact area, film thickness and the nature of dielectric films are defined for high frequency signal propagation. This paper provides a contrast between the requirements for high frequency signal transfer using capacitive coupling and electron tunneling versus traditional metallic contact.
Keywords :
capacitance; contact resistance; dielectric thin films; electrical contacts; interconnections; capacitance; capacitive coupled interface; capacitive interconnects; contact interface physics; degraded contacts; dielectric films; electronic tunneling; high data rate signal transfer; high frequency signal integrity; high frequency signal propagation; multipoint contact interface; resistance; traditional metallic contact; Capacitance; Connectors; Contact resistance; Couplings; Degradation; Frequency; Impedance; Physics; Power transmission lines; Tunneling;
Conference_Titel :
Electrical contacts - 2007, the 53rd ieee holm conference on
Conference_Location :
Pittsburgh, PA
Print_ISBN :
1-4244-0837-7
Electronic_ISBN :
1-4244-0838-5
DOI :
10.1109/HOLM.2007.4318188