DocumentCode :
3438207
Title :
Thermal stress and reliability analysis of microstrip isolator under temperature shock
Author :
Limei Rong ; Qingwei Yu ; Longhuan Du ; Jiangfeng Du ; Xiaoming Zheng ; Xiaowen Zhang ; Zuwen Wang
Author_Institution :
Sch. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2013
fDate :
15-18 July 2013
Firstpage :
829
Lastpage :
831
Abstract :
The stress of microstrip isolator under 50 temperature shocks was simulated using ANSYS. Simulation results showed that the maximum stress of microstrip isolator was in ferrite substrate after 50 temperature shocks, and the maximum stress of ferrite substrate increased from 38.3MPa to 60MPa with a growth of 56.7% and especially increased by 43.3% after first 5 temperature shocks, and the bottom surface of ferrite substrate was its maximal stress region. The importance of first 5 shocks in 50 temperature shocks was analyzed, and the influence of each part in microstrip isolator on device reliability was discussed according to stress distribution under 50 temperature shocks, material properties, and process features, and some measures were provided for improving microstrip isolator reliability under temperature shock.
Keywords :
ferrite isolators; integrated circuit reliability; microwave devices; thermal stresses; ANSYS simulation; device reliability; ferrite substrate; material properties; maximal stress region; microstrip isolator; process features; reliability analysis; temperature shock; thermal stress; Electric shock; Ferrites; Isolators; Microstrip; Stress; Substrates; Temperature distribution; ANSYS; ferrite substrate; microstrip isolator; reliability; temperature shock;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality, Reliability, Risk, Maintenance, and Safety Engineering (QR2MSE), 2013 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4799-1014-4
Type :
conf
DOI :
10.1109/QR2MSE.2013.6625698
Filename :
6625698
Link To Document :
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