Title :
Properties of cubic boron nitride films prepared by ion beam assisted deposition
Author :
Kumagai, Motohiro ; Konuma, S. ; Setsuhara, Y. ; Miyake, S. ; Ogata, K. ; Kohata, M.
Author_Institution :
Kanagawa High-Technol. Found., Japan
Abstract :
Boron nitride films were prepared by ion beam assisted deposition (IBAD). The films were synthesized on Si(100) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions. Properties of cubic boron nitride (cBN) films are studied especially regarding the crystallization of the films and the valence band spectra obtained from X-ray photoelectron spectroscopy (XPS). Structural analysis by Fourier transform infrared spectroscopy (FTIR) and cross-sectional transmission electron microscopy (TEM) confirms that polycrystalline films with a high cBN fraction were synthesized. Valence-band spectra obtained from XPS were measured to provide a method for characterization of the BN phases on the basis of experimental observations for the bulk cBN and hBN samples and theoretical prediction of densities of states
Keywords :
Fourier transform spectra; III-V semiconductors; X-ray photoelectron spectra; boron compounds; infrared spectra; ion beam assisted deposition; semiconductor thin films; transmission electron microscopy; valence bands; wide band gap semiconductors; BN; Fourier transform infrared spectroscopy; X-ray photoelectron spectroscopy; cross-sectional transmission electron microscopy; crystallization; cubic BN films; ion beam assisted deposition; valence band spectra; Boron; Crystallization; Density measurement; Fourier transforms; Infrared spectra; Ion beams; Nitrogen; Phase measurement; Spectroscopy; Transmission electron microscopy;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813884
