DocumentCode
3438434
Title
Properties of cubic boron nitride films prepared by ion beam assisted deposition
Author
Kumagai, Motohiro ; Konuma, S. ; Setsuhara, Y. ; Miyake, S. ; Ogata, K. ; Kohata, M.
Author_Institution
Kanagawa High-Technol. Found., Japan
Volume
2
fYear
1999
fDate
36495
Firstpage
1140
Abstract
Boron nitride films were prepared by ion beam assisted deposition (IBAD). The films were synthesized on Si(100) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions. Properties of cubic boron nitride (cBN) films are studied especially regarding the crystallization of the films and the valence band spectra obtained from X-ray photoelectron spectroscopy (XPS). Structural analysis by Fourier transform infrared spectroscopy (FTIR) and cross-sectional transmission electron microscopy (TEM) confirms that polycrystalline films with a high cBN fraction were synthesized. Valence-band spectra obtained from XPS were measured to provide a method for characterization of the BN phases on the basis of experimental observations for the bulk cBN and hBN samples and theoretical prediction of densities of states
Keywords
Fourier transform spectra; III-V semiconductors; X-ray photoelectron spectra; boron compounds; infrared spectra; ion beam assisted deposition; semiconductor thin films; transmission electron microscopy; valence bands; wide band gap semiconductors; BN; Fourier transform infrared spectroscopy; X-ray photoelectron spectroscopy; cross-sectional transmission electron microscopy; crystallization; cubic BN films; ion beam assisted deposition; valence band spectra; Boron; Crystallization; Density measurement; Fourier transforms; Infrared spectra; Ion beams; Nitrogen; Phase measurement; Spectroscopy; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1998.813884
Filename
813884
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