• DocumentCode
    3438434
  • Title

    Properties of cubic boron nitride films prepared by ion beam assisted deposition

  • Author

    Kumagai, Motohiro ; Konuma, S. ; Setsuhara, Y. ; Miyake, S. ; Ogata, K. ; Kohata, M.

  • Author_Institution
    Kanagawa High-Technol. Found., Japan
  • Volume
    2
  • fYear
    1999
  • fDate
    36495
  • Firstpage
    1140
  • Abstract
    Boron nitride films were prepared by ion beam assisted deposition (IBAD). The films were synthesized on Si(100) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions. Properties of cubic boron nitride (cBN) films are studied especially regarding the crystallization of the films and the valence band spectra obtained from X-ray photoelectron spectroscopy (XPS). Structural analysis by Fourier transform infrared spectroscopy (FTIR) and cross-sectional transmission electron microscopy (TEM) confirms that polycrystalline films with a high cBN fraction were synthesized. Valence-band spectra obtained from XPS were measured to provide a method for characterization of the BN phases on the basis of experimental observations for the bulk cBN and hBN samples and theoretical prediction of densities of states
  • Keywords
    Fourier transform spectra; III-V semiconductors; X-ray photoelectron spectra; boron compounds; infrared spectra; ion beam assisted deposition; semiconductor thin films; transmission electron microscopy; valence bands; wide band gap semiconductors; BN; Fourier transform infrared spectroscopy; X-ray photoelectron spectroscopy; cross-sectional transmission electron microscopy; crystallization; cubic BN films; ion beam assisted deposition; valence band spectra; Boron; Crystallization; Density measurement; Fourier transforms; Infrared spectra; Ion beams; Nitrogen; Phase measurement; Spectroscopy; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1998.813884
  • Filename
    813884