DocumentCode :
3438690
Title :
Advanced phosphorous emitters for high efficiency Si solar cells
Author :
Janssens, T. ; Posthuma, N.E. ; Van Kerschaver, E. ; Baert, K. ; Choulat, P. ; Everaert, J.-L. ; Goosens, J. ; Vandervorst, W. ; Poortmans, J.
Author_Institution :
IMECvzw, Leuven, Belgium
fYear :
2009
fDate :
7-12 June 2009
Abstract :
A homogeneous emitter designed for a high efficiency Si solar cell needs to fulfill specific requirements: (1) a low surface concentration of dopants and (2) a good contact resistance. The emitter formation is studied in detail for an optimized POCl3 diffusion scheme and for plasma doping.
Keywords :
contact resistance; diffusion; doping profiles; elemental semiconductors; oxygen compounds; phosphorus compounds; plasma immersion ion implantation; semiconductor doping; silicon; solar cells; POCl3; Si; contact resistance; dopants; homogeneous emitter; optimized diffusion scheme; phosphorous emitters; plasma doping; plasma immersion ion implantation; solar cells; surface concentration; Contact resistance; Current density; Dielectric substrates; Doping; Glass; Ovens; Passivation; Photovoltaic cells; Plasma immersion ion implantation; Surface resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411147
Filename :
5411147
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3438690
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