Title :
18.9% efficient silicon solar cell with laser doped emitter
Author :
Eisele, S. ; Röder, T. ; Ametowobla, M. ; Bilger, G. ; Köhler, J.R. ; Werner, J.H.
Author_Institution :
Inst. fur Phys. Elektron. (ipe), Univ. of Stuttgart, Stuttgart, Germany
Abstract :
A new record in laser doped solar cells with an efficiency ¿ = 18.9% is here reported. The ipe laser doping process allows for the fabrication of emitters of silicon solar cells via liquid state diffusion of predeposited dopant layers. Laser doping of sputtered phosphorus precursors results in an open circuit voltage Voc = 677 mV, thus, ipe laser doping is comparable to furnace diffusion.
Keywords :
diffusion; elemental semiconductors; semiconductor doping; silicon; solar cells; Si; ipe laser doping; laser doped emitter; liquid state diffusion; open circuit voltage; predeposited dopant layers; silicon solar cell; Circuits; Optical device fabrication; Passivation; Photovoltaic cells; Pulsed laser deposition; Semiconductor device doping; Semiconductor lasers; Silicon; Surface emitting lasers; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411148
