Fullerene ion (C60+) implantation in GaAs(100) substrate

Fullerene ion (C₆₀⁺) implantation in GaAs(100) substrates was performed to study the amount of vacancies created by carbon cluster implantation in GaAs. C₆₀⁺ ions were implanted at room temperature with atomic doses from 6×10¹² atoms/cm² to 3×10¹⁵ atoms/cm² at the energy between 60 keV (i.e. 1.0 keV per carbon atom in C₆₀ fullerene) and 300 keV (5.0 keV per carbon atom). C₂⁺-implantation in GaAs was also performed at the energy of 10 keV (5.0 keV per carbon atom) with atomic doses of 2×10¹³ atoms/cm² and 6×10¹⁴ atoms/cm² to compare the generation of vacancies by C₆₀ ⁺-implantation with that by a small carbon cluster ion-implantation. Rutherford backscattering spectrometry (RBS) analysis for GaAs(100) substrates implanted by C₆₀⁺, C₂⁺ were performed in order to study the amount of vacancies. The channeling RBS spectra showed that the vacancies created by C₆₀⁺-implantation were one order of magnitude higher than by C₂⁺-implantation. This high vacancy generation is caused by the non-linear multiple collision effect of large cluster bombardment. This result strongly indicates that C₆₀ ⁺-implantation is highly effective for As vacancy generation