DocumentCode :
3438861
Title :
ARET for system-level IC reliability simulation
Author :
Xuan, Xiangdong ; Chatterjee, Abhijit ; Singh, Adit D.
Author_Institution :
Sch. of ECE, Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2003
fDate :
30 March-4 April 2003
Firstpage :
572
Lastpage :
573
Abstract :
The simulator ARET (ASIC Reliability Evaluation Tool) is being developed at Georgia Institute of Technology. ARET focuses on system-level reliability with several efficient built-in system-level simulation models. By developing ARET, we are trying to focus on "real world" ICs - ICs with fabrication defects in devices and interconnect - and simulate IC reliability from a system perspective to accomplish design-for-reliability. As the basis of system-level simulation, device-level failure models incorporating physical defects were created and checked with measured data. To accurately evaluate the reliability at system-level, several simulation models were developed by means of circuit simulation, hierarchical analyses and statistical approaches.
Keywords :
CMOS integrated circuits; application specific integrated circuits; circuit simulation; electromigration; failure analysis; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; ARET; ASIC reliability evaluation tool; analog circuit; built-in system-level simulation models; circuit simulation; design-for-reliability; device-level failure models; digital circuits; fabrication defects; hierarchical analyses; hot carrier-induced CMOS degradation; interconnect electromigration; physical defects; real world ICs; simulation models; statistical approaches; system-level IC reliability simulation; Circuit simulation; Circuit testing; Current density; Degradation; Fabrication; Integrated circuit interconnections; Integrated circuit modeling; Integrated circuit testing; Qualifications; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
Type :
conf
DOI :
10.1109/RELPHY.2003.1197811
Filename :
1197811
Link To Document :
بازگشت