Title :
Some Contributions to the Understanding of the Puzzle of Physical Processes of Degradation in Irradiated Silicon
Author :
Lazanu, S. ; Lazanu, I. ; Ciurea, M.L.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
In the present paper, we intend to bring some clarifications related to the role played by primary defects in long term degradation, to the dependence of degradation on the orientation of the wafer, as well as on the spatial distribution of the degradation produced by low energy particle irradiation.
Keywords :
crystal orientation; elemental semiconductors; point defects; proton effects; silicon; silicon radiation detectors; Si; defect kinetics; irradiated silicon; low energy particle irradiation; point defects; proton effect; radiation damage; silicon detectors; wafer orientation; Atomic measurements; Crystalline materials; Degradation; Kinetic theory; Lattices; Leakage current; Physics; Radiation detectors; Semiconductor radiation detectors; Silicon radiation detectors; defect kinetics; radiation damage; silicon detectors;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519724
