Title :
Voltage-driven distribution of gate oxide breakdown
Author :
Hiraiwa, A. ; Sakai, S. ; Ishikawa, D.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
fDate :
30 March-4 April 2003
Abstract :
The distribution of gate oxide breakdown is not driven by the conventionally-proposed thickness but by the gate voltage, and follows the minimum distribution of a lognormal stochastic variable. We ascribe the disparity between the previous results and ours to the narrower ranges of thickness and voltage in the previous experiments. The new findings will be a key basis for investigating the reliability thinning limit.
Keywords :
MOS capacitors; log normal distribution; semiconductor device breakdown; semiconductor device reliability; NMOS capacitors; gate oxide breakdown; gate voltage; lognormal stochastic variable distribution; reliability thinning limit; time to breakdown; voltage-driven distribution; Breakdown voltage; Capacitors; Dielectric breakdown; Dielectric substrates; Electric breakdown; MOS devices; Pulse generation; Stochastic processes; Stress; Weibull distribution;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN :
0-7803-7649-8
DOI :
10.1109/RELPHY.2003.1197816
