Title :
Design of low voltage BiCMOS power amplifiers for wireless communications
Author :
Fortes, Fernando ; Do Rosário, Maria João
Author_Institution :
Inst. de Telecomunicacoes, Inst. Superior Tecnico, Lisbon, Portugal
Abstract :
This paper describes a design technique for low voltage RF power amplifiers aimed at wireless communications. A power amplifier prototype was designed using this technique for a standard 0.8 μm BiCMOS process. The circuit presents a small signal gain of 24.3 dB. Its output power is 27 dBm with a gain of 20.3 dB when biased with 3 V power supply at 1.9 GHz
Keywords :
BiCMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; cordless telephone systems; low-power electronics; 1.9 GHz; 20.3 dB; 24.3 dB; 3 V; BiCMOS power amplifiers; COB assembly; DECT specification; circuit implementation; design technique; low voltage; power amplifier prototype; small signal gain; standard BiCMOS process; wireless communications; BiCMOS integrated circuits; Gain; Low voltage; Power amplifiers; Power generation; Power supplies; Prototypes; Radio frequency; Radiofrequency amplifiers; Wireless communication;
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
DOI :
10.1109/ICECS.1998.813932
