DocumentCode :
3439207
Title :
X-Ray Luminescence in ZnIn2S4, CdGa2S4 and Zn3In2S6
Author :
Machuga, A. ; Radu, R. ; Pintea, V. ; Arama, E. ; Zhitar, V. ; Shemyakova, T.
Author_Institution :
Tech. Univ. of Moldova, Chisinau
Volume :
2
fYear :
2007
fDate :
Oct. 15 2007-Sept. 17 2007
Firstpage :
377
Lastpage :
380
Abstract :
Results related to investigation of X-ray induced luminescence spectra in ZnIn2S4, CdGa2S4 and Zn3In2S6 single crystals measured at 300 and 80 K are presented. The spectra mainly consist of one band with maximum at 1.67 and 1.97 eV (80 K), respectively, generated due to donor-acceptor recombination.
Keywords :
X-ray emission spectra; cadmium compounds; conduction bands; electron-hole recombination; gallium compounds; indium compounds; luminescence; ternary semiconductors; wide band gap semiconductors; zinc compounds; CdGa2S4; X-ray induced luminescence spectra; Zn3In2S6; ZnIn2S4; chemical transport reaction method; conduction band; donor-acceptor recombination; single crystals; temperature 300 K; temperature 80 K; Anodes; Conducting materials; Crystalline materials; Crystals; Luminescence; Medical tests; Power supplies; Temperature; Voltage; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-0847-4
Type :
conf
DOI :
10.1109/SMICND.2007.4519739
Filename :
4519739
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3439207
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