DocumentCode :
3439358
Title :
Si Diode Temperature Sensor beyond 300°C
Author :
Santra, S. ; Guha, P.K. ; Haque, M.S. ; Ali, S.Z. ; Udrea, F.
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge
Volume :
2
fYear :
2007
fDate :
Oct. 15 2007-Sept. 17 2007
Firstpage :
415
Lastpage :
418
Abstract :
This paper describes the performance of silicon diode as a temperature sensor when operated at extreme temperatures. Silicon p+-n-n+ junction diodes were designed in Cadence and fabricated in 1.0 mum SOI CMOS process. The diodes were operated from 22degC to 780degC at a constant current. This is for the first time in the literature we are showing that Si diode can operate as a temperature sensor at a ground breaking high temperature of up to 550degC reliably. The voltage vs temperature (V-T) slope was found around -1.3 mV/degC The graph becomes nonlinear above 550degC. Extensive simulation in ´Sentaurus Device´ and theoretical calculation was carried out to match the diode temperature characteristics with the experimental results.
Keywords :
CMOS integrated circuits; elemental semiconductors; p-n junctions; semiconductor device reliability; semiconductor diodes; silicon; silicon-on-insulator; temperature sensors; SOI CMOS process; Sentaurus device; Si; diode reliability; diode temperature characteristics; ground breaking; silicon p+-n-n+ junction diodes; size 1.0 mum; temperature 22 C to 780 C; temperature sensor; Biomembranes; Bipolar transistors; CMOS process; Diodes; Gas detectors; Land surface temperature; Silicon; Temperature measurement; Temperature sensors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-0847-4
Type :
conf
DOI :
10.1109/SMICND.2007.4519747
Filename :
4519747
Link To Document :
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