Investigation of the detection, mixing and frequency multiplication in the planar semiconductor elements based on the high doped GaAs/AlAs superlattices in MM and SBMM wavelength bands

Author

Paveliev, D.G. ; Koschurinov, Yu.I. ; Ustinov, V.M. ; Zhukov, A.E. ; Kop´ev, P.S.

Author_Institution

Nizhny Novgorod State Univ., Russia

Volume

2

fYear

2001

fDate

2001

Firstpage

744

Abstract

Wide-miniband-superlattice devices are suitable for generation, detection,mixing and frequency multiplication of microwaves radiation. The devices, operated at room temperature, are based on nonlinear transport properties of the miniband electrons

Keywords

III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; heavily doped semiconductors; millimetre wave detectors; millimetre wave frequency convertors; millimetre wave generation; millimetre wave mixers; semiconductor superlattices; submillimetre wave detectors; submillimetre wave generation; submillimetre wave mixers; EHF; GaAs-AlAs; GaAs/AlAs superlattices; MM-wave bands; THF; frequency mixing; frequency multiplication; highly doped superlattices; nonlinear transport properties; planar semiconductor elements; room temperature operation; submillimetre-wave bands; superlattice detector; wide miniband superlattice devices; Current density; Detectors; Electrons; Frequency conversion; Gallium arsenide; Microwave devices; Microwave generation; Schottky diodes; Superlattices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Millimeter and Sub-Millimeter Waves, 2001. The Fourth International Kharkov Symposium on

Conference_Location

Kharkov

Print_ISBN

0-7803-6473-2

Type

conf

DOI

10.1109/MSMW.2001.947296

Filename

947296