DocumentCode :
3439821
Title :
Design techniques for highly efficient class-F amplifiers driven by low voltage supplies
Author :
Pedro, José Carlos ; Gomes, Luís Ramos ; Carvalho, Nuno Borges
Author_Institution :
Inst. de Telecomunicacoes, Aveiro Univ., Portugal
Volume :
3
fYear :
1998
fDate :
1998
Firstpage :
201
Abstract :
The present paper provides design techniques for highly efficient microwave power amplifiers driven by low voltage power supplies. Main power amplifier design variables, such as conduction angle and fundamental and harmonic load impedance terminations, are studied, to enable the selection of the optimum parameter set under small voltage operating conditions. Theoretical predicted conclusions are then validated with a practical S-band GaAs monolithic microwave integrated circuit, MMIC, class-F power amplifier
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; circuit optimisation; field effect MMIC; gallium arsenide; integrated circuit design; low-power electronics; GaAs; III-V semiconductors; MESFETs; S-band; class-F power amplifier; conduction angle; design techniques; fundamental load impedance terminations; harmonic load impedance terminations; low voltage supplies; monolithic microwave integrated circuit; optimum parameter set; power amplifier design variables; voltage operating conditions; Gallium arsenide; High power amplifiers; Impedance; Low voltage; MMICs; Microwave amplifiers; Microwave theory and techniques; Power amplifiers; Power supplies; Power system harmonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
Type :
conf
DOI :
10.1109/ICECS.1998.813967
Filename :
813967
Link To Document :
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