• DocumentCode
    3439835
  • Title

    Nickel surface micromachining

  • Author

    Furukawa, S. ; Roy, S. ; Miyajima, H. ; Mehregany, M.

  • Author_Institution
    Central Res. Lab., Asahi Chem. Ind. Co. Ltd., Shizuoka, Japan
  • fYear
    1995
  • fDate
    4-6 Oct 1995
  • Firstpage
    161
  • Lastpage
    166
  • Abstract
    This paper describes a one-mask surface micromachining process in which nickel is used as a structural material and polysilicon as a sacrificial layer. High-aspect-ratio photolithography, up to 20 μm thickness, is used for making a plating mold. Electroless plating on polysilicon is used for nickel deposition. 1 to 5 μm thick polysilicon is deposited in a low-pressure chemical vapor deposition (LPCVD) process. A short pretreatment etch of polysilicon prior to electroless plating, causes the polysilicon surface to become porous, providing a suitable mechanical bonding site for excellent adhesion of nickel. KOH is used for etching the polysilicon sacrificial layer for releasing a nickel moving part. Using this process, electrostatic nickel microactuators ranging from 5 to 20 pm in thickness are fabricated
  • Keywords
    chemical vapour deposition; electroless deposition; elemental semiconductors; etching; microactuators; micromachining; micromechanical devices; nickel; photolithography; potassium compounds; silicon; 1 to 5 mum; 20 mum; KOH; Ni; Ni deposition; Ni surface; Ni-Si; Pt mold; Si; adhesion; electroless plating; high-aspect-ratio photolithography; low-pressure chemical vapor deposition; mechanical bonding; microactuators; one-mask surface micromachining; photolithography; polysilicon surface; porous material; pretreatment; sacrificial layer; structural material; Electrostatics; Etching; Fabrication; Laboratories; Microactuators; Micromachining; Micromechanical devices; Nickel; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Machine and Human Science, 1995. MHS '95., Proceedings of the Sixth International Symposium on
  • Conference_Location
    Nagoya
  • Print_ISBN
    0-7803-2676-8
  • Type

    conf

  • DOI
    10.1109/MHS.1995.494233
  • Filename
    494233