Application of a New Body Contact to SOI LDMOSFET Devices, Three-Dimesnional Simulation

Author

Daghighi, Arash ; Osman, Mohamed A.

Author_Institution

Dept. of Electr. Eng., Islamic Azad Univ. Majlesi Branch, Isfahan

Volume

2

fYear

2007

fDate

Oct. 15 2007-Sept. 17 2007

Firstpage

529

Lastpage

532

Abstract

Application of a new area efficient body contact to LDMOSFET devices in silicon-on-insulator (SOI) material has been investigated using three-dimensional simulation. A comparative study of the new body contact and a conventional body-contacted structure for high voltage SOI devices is presented. Using the new body contact, current drive (I_DS) was increased by 14% and current gain cut-off frequency (f_T) by 10%. In addition, improved performance is achieved when comparing on-resistance (Ron) and breakdown voltage (V_BR). The new body contact structure is applicable to both high-voltage planar or trench SOI and bulk devices.

Keywords

MOSFET; silicon-on-insulator; 3D simulation; LDMOSFET devices; body contact; bulk devices; current drive; silicon-on-insulator material; Computational modeling; Contacts; Dielectric substrates; Immune system; Inductors; Isothermal processes; MOSFETs; Radio frequency; Silicon; Voltage; Body contact; Breakdown voltage; Floating body effects; On-resistance; SOI LDMOSFET; Three-dimensional simulation; isothermal drift-diffusion model;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2007. CAS 2007. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-0847-4

Type

conf

DOI

10.1109/SMICND.2007.4519777

Filename

4519777