Title :
Ultra low phase noise C and X band bipolar transistors dielectric resonator oscillators
Author :
Regis, M. ; Llopis, O. ; van Haaren, B. ; Plana, R. ; Gruhle, A. ; Rayssac, J. ; Graffeuil, J.
Author_Institution :
LAAS, CNRS, France
Abstract :
In this paper, a comparison between Si BJT and SiGe HBT devices for ultra low phase noise dielectric resonator microwave oscillators design at 4.7 GHz and 10.2 GHz is presented. Different oscillators topologies have been realized and characterized. The best measured phase noise have been achieved with the SiGe HBT devices. At C band, the best phase noise level is below -135 dBc/Hz at 10 kHz offset frequency and, at X band a value of -118 dBc/Hz at 10 kHz offset frequency has been observed
Keywords :
bipolar transistor circuits; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; microwave oscillators; phase noise; semiconductor device noise; semiconductor materials; silicon; silicon compounds; 10 kHz; 10.2 GHz; 4.7 GHz; C band; Si; Si BJT; SiGe; SiGe HBT devices; X band; dielectric resonator oscillators; microwave oscillators; oscillators topologies; ultra low phase noise; Bipolar transistors; Dielectric devices; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Microwave oscillators; Phase noise; Silicon germanium; Topology;
Conference_Titel :
Frequency Control Symposium, 1998. Proceedings of the 1998 IEEE International
Conference_Location :
Pasadena, CA
Print_ISBN :
0-7803-4373-5
DOI :
10.1109/FREQ.1998.717946
