Ultra low phase noise C and X band bipolar transistors dielectric resonator oscillators

Author

Regis, M. ; Llopis, O. ; van Haaren, B. ; Plana, R. ; Gruhle, A. ; Rayssac, J. ; Graffeuil, J.

Author_Institution

LAAS, CNRS, France

fYear

1998

fDate

27-29 May 1998

Firstpage

507

Lastpage

511

Abstract

In this paper, a comparison between Si BJT and SiGe HBT devices for ultra low phase noise dielectric resonator microwave oscillators design at 4.7 GHz and 10.2 GHz is presented. Different oscillators topologies have been realized and characterized. The best measured phase noise have been achieved with the SiGe HBT devices. At C band, the best phase noise level is below -135 dBc/Hz at 10 kHz offset frequency and, at X band a value of -118 dBc/Hz at 10 kHz offset frequency has been observed

Keywords

bipolar transistor circuits; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; microwave oscillators; phase noise; semiconductor device noise; semiconductor materials; silicon; silicon compounds; 10 kHz; 10.2 GHz; 4.7 GHz; C band; Si; Si BJT; SiGe; SiGe HBT devices; X band; dielectric resonator oscillators; microwave oscillators; oscillators topologies; ultra low phase noise; Bipolar transistors; Dielectric devices; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Microwave oscillators; Phase noise; Silicon germanium; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 1998. Proceedings of the 1998 IEEE International

Conference_Location

Pasadena, CA

ISSN

1075-6787

Print_ISBN

0-7803-4373-5

Type

conf

DOI

10.1109/FREQ.1998.717946

Filename

717946