Title :
Conference highlights
Abstract :
The following topics are dealt with: high-k metal gate stacks; integrated circuits and manufacturing; advanced interconnect technology; displays, sensors, and MEMS; organic and flexible electronics; CMOS devices; solid-state and nanoelectronic devices; nonvolatile memory technologies; MONOS and nanocrystal memories; CMOS and interconnect reliability; modeling and simulation; nanotubes and nanowires; DRAM and NAND Flash; quantum, power and compound semiconductor devices; RF power and power switching devices; gate dielectric breakdown; strained silicon technology; advanced planar CMOS devices; fully silicided gates; SRAM; bias-temperature instability and interface traps; advanced FEOL technology; SOI and multi-gate devices; resistive switching memories; image sensors and photon detectors; thin film transistors for displays and system on panel; and III-V light emitters
Keywords :
CMOS integrated circuits; DRAM chips; SRAM chips; display devices; flash memories; flexible electronics; high-k dielectric thin films; image sensors; integrated circuit interconnections; integrated circuit technology; integrated memory circuits; micromechanical devices; monolithic integrated circuits; nanoelectronics; nanotube devices; nanowires; power semiconductor devices; semiconductor devices; semiconductor switches; silicon-on-insulator; thin film transistors; CMOS devices; DRAM chips; FEOL technology; III-V light emitters; MEMS; MONOS; NAND flash memories; SOI; SRAM; bias-temperature instability; dielectric breakdown; displays; flexible electronics; high-k metal gate stacks; image sensors; integrated circuits interconnect; integrated circuits manufacturing; interface traps; multi-gate devices; nanocrystal memories; nanoelectronic devices; nanotubes; nanowires; nonvolatile memory technologies; organic electronics; photon detectors; power semiconductor devices; quantum devices; resistive switching memories; silicon-on-insulator; solid-state devices; strained silicon technology; thin film transistors;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609250
