Title :
Analysis of strain compensated GaAs-based InAs QD solar cells
Author :
Cress, Cory D. ; Hubbard, Seth M. ; Maximenko, Serguei I. ; Bailey, Chris G. ; Forbes, David V. ; Raffaelle, Ryne P. ; Twigg, Mark E. ; Walters, Robert J.
Author_Institution :
Electron. Sci. & Technol. Div., U.S. Naval Res. Lab., Washington, DC, USA
Abstract :
A suite of characterization techniques including electron beam induced current and cross-sectional transmission electron microscopy in cooperation with current voltage and external quantum efficiency solar measurements are used to analyze the effects of incorporating strain-compensating layers in GaAs-based InAs quantum dot solar cells. The data indicate that strain compensation layers can reduce defect densities and increase device performance.
Keywords :
EBIC; III-V semiconductors; compensation; gallium arsenide; indium compounds; semiconductor quantum dots; solar cells; transmission electron microscopy; GaAs; InAs; cross sectional transmission electron microscopy; current voltage; electron beam induced current; external quantum efficiency; quantum dot solar cells; strain compensation; Capacitive sensors; Current measurement; Electron beams; Gallium arsenide; Laboratories; Photovoltaic cells; Quantum dots; Scanning electron microscopy; Tensile stress; Transmission electron microscopy;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411224
