Etching of monocrystalline CuInSe2 samples

In the fabrication of CIS and CIGS cells, the absorber layers are often etched in a KCN solution prior to the deposition of buffered and window layers. It is possible that cell performance may be improved further by removing a thin surface absorber layer after the KCN etching. In the present project, the variation of etching rate with different etching solution concentrations applied to the bulk CuInSe₂ samples is being studied.