Low output conductance composite MOSFET´s for high frequency analog design

This paper presents a simple approach to design composite FET´s with low output conductance. These composite transistors consist of the series association of two transistors, with the transistor connected to the drain terminal wider than the transistor connected to the source terminal. A composite transistor has two main advantages over its “DC equivalent” transistor of uniform width: significant area savings and a much higher cutoff frequency