The Physical Limit and Manufacturability of Power Diode with Carrier Lifetime Control

Author

Tan, Cher Ming ; Sun, Lina ; Raghavan, Nagarajan ; Huang, Guangyu ; Hsu, Chuk ; Wang, Chase

Author_Institution

Nanyang Technol. Univ., Singapore

fYear

2007

fDate

23-25 May 2007

Firstpage

46

Lastpage

51

Abstract

Carrier lifetime control (CLC) power diode is known to perform better than the standard power diode in terms of low loss, high switching speed and high reverse blocking voltage. We perform an extensive MEDICI device simulation covering a large parameter space of the structural and doping concentrations of the power diode through the use of design of experiment (DOE) matrix. The optimal electrical performance for each electrical parameter of the CLC power diode as well as the standard power diode is obtained, which represents the physical limit of these power diodes. The manufacturability of the power diodes are evaluated through the sensitivity analysis of these optimal electrical performances with respect to the variation of the structural and doping parameters. Such variations represent the process variations during actual diode fabrication.

Keywords

design of experiments; diodes; electrical products industry; blocking voltage; carrier lifetime control; design of experiment matrix; power diode; response surface method; sensitivity analysis; Charge carrier lifetime; Diodes; Doping; Fabrication; Manufacturing; Medical simulation; Performance evaluation; Sensitivity analysis; US Department of Energy; Voltage control; Carrier Lifetime Control; Design of Experiment; Power diode; Response Surface Method; Simulated Annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics and Applications, 2007. ICIEA 2007. 2nd IEEE Conference on

Conference_Location

Harbin

Print_ISBN

978-1-4244-0737-8

Electronic_ISBN

978-1-4244-0737-8

Type

conf

DOI

10.1109/ICIEA.2007.4318367

Filename

4318367