Title :
Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces - guiding principles for gate metal selection
Author :
Shiraishi, K. ; Akasaka, Y. ; Miyazaki, S. ; Nakayama, T. ; Nakaoka, T. ; Nakamura, G. ; Torii, K. ; Furutou, H. ; Ohta, A. ; Ahmet, P. ; Ohmori, K. ; Watanabe, H. ; Chikyow, T. ; Green, M.L. ; Nara, Y. ; Yamada, K.
Author_Institution :
Inst. of Phys., Tsukuba Univ.
Abstract :
We have constructed a universal theory of workfunctions at metal/Hf-based dielectrics interfaces by combining an oxygen vacancy effects and a new concept of generalized charge neutrality level. Our theory systematically reproduces the experimentally observed workfunctions of various gate materials, including the unusual behaviors of workfunctions of both p-metals and metal silicides, and will become a useful guiding principle for the material selection of gate metals
Keywords :
MIS structures; high-k dielectric thin films; work function; Hf; gate metal selection; material selection; metal-hafnium-based high-k dielectrics interfaces; oxygen vacancy effects; workfunction theory; Dielectric materials; Electrons; Gold; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Lead compounds; Materials science and technology; Physics;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609260
