• DocumentCode
    3440566
  • Title

    Dependence of pmos metal work functions on surface conditions of high-k gate dielectrics

  • Author

    Jha, Rashmi ; Lee, Bongmook ; Chen, Bei ; Novak, Steven ; Majhi, Prashant ; Misra, Veena

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    43
  • Lastpage
    46
  • Abstract
    The effective work function of PMOS metal gate electrode as a function of intentionally altered HfO2 surfaces was investigated. The impact of capping layers, diffusion barriers and interfacial layers on the final work function was also examined. The factors responsible for the change in the effective work function after subsequent thermal treatments were identified and routes to maintain the high effective work function have been demonstrated
  • Keywords
    MIS structures; high-k dielectric thin films; interface states; work function; HfO2; PMOS metal work functions; capping layer impact; diffusion barriers; high-k gate dielectrics; interfacial layers; surface conditions; Annealing; Capacitance-voltage characteristics; Costs; Dielectrics; Electrodes; Hafnium oxide; History; Oxygen; Surface treatment; Thermal factors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609261
  • Filename
    1609261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3440566