• DocumentCode
    3440595
  • Title

    Lithography for manufacturing of sub-65nm nodes and beyond

  • Author

    Lin, Burn J.

  • Author_Institution
    Taiwan Semicond. Manuf. Co., Hsinchu
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    48
  • Lastpage
    51
  • Abstract
    Lithography is facing unprecedented difficulties to go beyond the 65-nm node with 90-nm half pitch. This presentation shows the types of lithography combined with necessary resolution enhancement techniques to handle the 65-, 45-, 32-, and 22-nm nodes. The pros and cons, feasibility for manufacturing, and economical impacts of these technologies will be compared
  • Keywords
    immersion lithography; nanotechnology; 22 to 65 nm; 90 nm; immersion lithography; nanotechnology; resolution enhancement; Apertures; Focusing; Lenses; Lithography; Manufacturing; Optical imaging; Random access memory; Resists; Semiconductor device manufacture; Surfaces;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609263
  • Filename
    1609263
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3440595