Optical properties of delta doped InAs/GaAs0.88Sb0.12 structure for novel concept solar cells

Author

Ban, K.Y. ; Dahal, S.N. ; Honsberg, C.B.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2009

fDate

7-12 June 2009

Abstract

We have investigated optical properties of InAs quantum dots (QDs) on GaAsSb barrier layer with different doping levels. In order to precisely control occupancy of subband levels in conduction band offset (CBO) in the material system, delta doping layer in the barrier was incorporated as an efficient carrier supply. Interband transitions between ground states or excited states were detected by implementing time-integrated photoluminescence (PL) whereas intersubband transitions have shown via Fourier transform-infrared spectroscopy (FT-IR) at room temperature. The results are compared and discussed with theoretical calculation based on k.p. method.

Keywords

Fourier transform spectra; III-V semiconductors; arsenic compounds; conduction bands; deep levels; excited states; gallium compounds; ground states; indium compounds; infrared spectra; k.p calculations; photoluminescence; semiconductor doping; semiconductor quantum dots; FT-IR; Fourier transform-infrared spectroscopy; InAs-GaAs_0.88Sb_0.12; barrier layer; conduction band offset; delta doped structure; doping levels; excited states; ground states; interband transitions; intersubband transitions; k.p method; quantum dots; solar cells; temperature 293 K to 298 K; time-integrated photoluminescence; Conducting materials; Control systems; Doping; Gallium arsenide; Land surface temperature; Optical materials; Photoluminescence; Quantum dots; Spectroscopy; Stationary state;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411245

Filename

5411245