DocumentCode :
3441112
Title :
Effectiveness of fast recovery MOSFETs to reliability of switching power supplies
Author :
Choi, Won-suk ; Young, Sung-mo
Author_Institution :
PSS Team, Fairchild Korea Semicond., Bucheon, South Korea
fYear :
2010
fDate :
14-16 June 2010
Firstpage :
1113
Lastpage :
1118
Abstract :
Several topologies for distributed power systems have been introduced to reduce power losses and device stress on the power devices while achieving high power density. Among them, resonant converters are very suitable for these applications since its performance delivers increased power efficiency, minimized components count and reduced EMI over previous power supply topologies. Furthermore, a synchronous rectification becomes essential building block in output stage of converters. Both LLC resonant converters and synchronous rectifiers utilize body diode of MOSFET during dead time. However, use of body diode of MOSFET in these applications can lead to system failures. An enhanced FRFET®, power MOSFET with fast recovery body diode, provides higher reliability at the same performance.
Keywords :
electromagnetic interference; power MOSFET; switched mode power supplies; EMI; FRFET; LLC resonant converters; device stress; distributed power systems; fast recovery MOSFET; fast recovery body diode; power MOSFET; power efficiency; power losses; reliability; switching power supplies; synchronous rectification; synchronous rectifiers; Chromium; Inductors; MOSFETs; Magnetic resonance; Power supplies; Power system reliability; Rectifiers; Semiconductor diodes; Switching converters; Zero voltage switching; EMI; FRFET®; LLC resonant converter; Reverse recovery; Switching losses; Synchronous rectifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Electrical Drives Automation and Motion (SPEEDAM), 2010 International Symposium on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-4986-6
Electronic_ISBN :
978-1-4244-7919-1
Type :
conf
DOI :
10.1109/SPEEDAM.2010.5542026
Filename :
5542026
Link To Document :
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