Low voltage high speed SiO/sub 2/AlGaN/AlLaO/sub 3/TaN memory with good retention

Author

Chin, Albert ; Laio, C.C. ; Chen, C. ; Chiang, K.C. ; Yu, D.S. ; Yoo, W.J. ; Samudra, G.S. ; Wang, T. ; Hsieh, I.J. ; McAlister, S.P. ; Chi, C.C.

Author_Institution

Dept. of Electron. Eng., Nat´´l Chiao-Tung Univ., Hsinchu

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

158

Lastpage

161

Abstract

To improve trapping using deeper well AlGaN (chi=3.8eV), lower voltage drop in high-K AlLaO₃ barrier (k=23 ), and smaller erase current by large DeltaE_C of AlLaO₃/TaN, the SiO₂/AlGaN/AlLaO₃/TaN devices show good 85degC memory integrity of low plusmn10V 1ms P/E, large 3.9V initial DeltaV_th and 2.4V extrapolated 10-year retention. A fast 100mus P/E of plusmn11V still gives 3.0V initial DeltaV_th and 1.6V 10-year retention

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high-speed integrated circuits; lanthanum compounds; low-power electronics; semiconductor devices; silicon compounds; wide band gap semiconductors; 2.4 V; 3.0 V; 3.9 V; 85 C; SiO₂-AlGaN-AlLaO₃-TaN; deeper well; erase current; good retention; high speed; improve trapping; low voltage; memory integrity; Aluminum gallium nitride; Atherosclerosis; Councils; Dielectrics; Logic; Low voltage; MONOS devices; Nonvolatile memory; Physics computing; Power supplies;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609294

Filename

1609294