• DocumentCode
    3441424
  • Title

    Optimal design of a 5kW/dm3 / 98.3% efficient TCM resonant transition single-phase PFC rectifier

  • Author

    Biela, J. ; Hassler, D. ; Miniböck, J. ; Kolar, J.W.

  • Author_Institution
    Power Electron. Syst. Lab., ETH Zurich, Zurich, Switzerland
  • fYear
    2010
  • fDate
    21-24 June 2010
  • Firstpage
    1709
  • Lastpage
    1716
  • Abstract
    In many applications single-phase PFC rectifiers should meet the demand for a high efficiency and a high power density at the same time. Depending on the weighting of these two design criteria, different topologies could be advantageous. As has been shown, with bridgeless PFC rectifiers an ultra high efficiency of 99.3% or a high power density of 5.6kW/dm3 could be realised. However, due to the hard switching operation it is not possible to achieve an exceptional efficiency and power density at the same time. Furthermore, SiC Schottky diodes are required for highly compact or highly efficient systems. Therefore, a triangular current mode (TCM), resonant-transition single phase PFC rectifier concept is presented in this paper, which overcomes both limitations. Besides a design procedure for optimising the chip area, also a simple and robust control concept, where a novel zero crossing detection concept is included, is explained and a prototype system as well as measurement results are presented for validating the concept and the design procedure.
  • Keywords
    Schottky diodes; power factor correction; rectifying circuits; silicon compounds; wide band gap semiconductors; SiC; SiC Schottky diodes; TCM resonant transition single-phase PFC rectifier; bridgeless PFC rectifiers; high power density; triangular current mode; zero crossing detection; Area measurement; Design optimization; Prototypes; Rectifiers; Resonance; Robust control; Schottky diodes; Semiconductor device measurement; Silicon carbide; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Conference (IPEC), 2010 International
  • Conference_Location
    Sapporo
  • Print_ISBN
    978-1-4244-5394-8
  • Type

    conf

  • DOI
    10.1109/IPEC.2010.5542042
  • Filename
    5542042