DocumentCode
3441551
Title
High performance, sub-50nm MOSFETS for mixed signal applications
Author
Dimitrov, V. ; Heng, J.B. ; Timp, K. ; Dimauro, O. ; Chan, R. ; Feng, J. ; Hafez, W. ; Sorsch, T. ; Mansfield, W. ; Miner, J. ; Kornblit, A. ; Klemens, F. ; Bower, J. ; Cirelli, R. ; Ferry, E. ; Taylor, A. ; Feng, M. ; Timp, G.
Author_Institution
Beckman Inst., Illinois Univ., Urbana, IL
fYear
2005
fDate
5-5 Dec. 2005
Lastpage
207
Abstract
We have fabricated and tested sub-50nm gate length nMOSFETs with fT up to 290GHz to assess their suitability for mixed signal applications in the super high frequency (SHF) band, i.e. 3-30GHz. We have also developed an accurate, high frequency (1 -50GHz) model suitable for integration with digital CMOS
Keywords
CMOS integrated circuits; MOSFET; integrated circuit testing; mixed analogue-digital integrated circuits; 1 to 50 GHz; 50 nm; MOSFETS; digital CMOS; mixed signal applications; super high frequency band; CMOS technology; Circuits; Cutoff frequency; Electrical resistance measurement; Fabrication; MOSFETs; Noise figure; Performance gain; Radio frequency; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location
Washington, DC
Print_ISBN
0-7803-9268-X
Type
conf
DOI
10.1109/IEDM.2005.1609307
Filename
1609307
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