Title :
High-voltage LDMOS compact model for RF applications
Author :
Willemsen, M.B. ; van Langevelde, R.
Author_Institution :
Philips Res. Labs., Eindhoven
Abstract :
We present a compact model for RF-LDMOS transistors. The model is based on a continuous description of the lateral electric field, and contains the physical phenomena of partial lateral depletion and velocity saturation in the drift region. The model has been validated with device simulations and measurements
Keywords :
MOSFET; semiconductor device models; RF-LDMOS transistors; compact model; drift region; lateral electric field; partial lateral depletion; velocity saturation; Capacitance measurement; Circuit simulation; Electronic mail; Frequency measurement; Laboratories; Poisson equations; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609308
