Physics-based noise modelling of semiconductor devices in largesignal operation including low-frequency noise conversion effects

Author

Ghione, G. ; Bonani, F. ; Donati, S. ; Bertazzi, F. ; Conte, G.

Author_Institution

Dipt. di Elettronica, Politecnico di Torino

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

212

Lastpage

215

Abstract

A review is provided on state-of-the-art techniques for the physics-based numerical simulation of noise in semiconductor devices, with particular attention to large-signal forced operation and to the related noise frequency conversion. Open problems associated to the modeling of 1/f-like noise in large-signal operation through a superposition of GR noise sources are discussed with the help of simulation examples. Finally, a 2D physics-based noise analysis of a FET active mixer is presented

Keywords

field effect transistors; mixers (circuits); semiconductor device models; semiconductor device noise; 1/f-like noise; FET active mixer; large-signal operation; noise analysis; noise frequency conversion; noise modeling; noise sources; physics-based numerical simulation; semiconductor devices; state-of-the-art techniques; Acoustic noise; Analytical models; Circuit noise; Circuit simulation; Fluctuations; Frequency conversion; Low-frequency noise; Noise generators; Semiconductor device noise; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609309

Filename

1609309