Title :
A bias dependent HEMT noise model
Author :
Klapproth, L. ; Schaefer, A. ; Boeck, G.
Author_Institution :
Microwave Group, Tech. Univ. Berlin, Germany
Abstract :
We present a model to describe the noise performance of HEMTs in dependence of the applied gate and drain voltages. The model is based on two uncorrelated noise sources at the intrinsic transistor. Temperatures related to resistors in the intrinsic transistor model are used to model the noise behavior of the device. By using the correlation matrix technique the parameters are extracted from noise parameter measurements in a straightforward manner.
Keywords :
correlation methods; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; HEMT noise model; applied drain voltage; applied gate voltage; correlation matrix technique; intrinsic transistor; noise behavior; noise performance; uncorrelated noise sources; Circuit noise; Equivalent circuits; HEMTs; Microwave transistors; Noise figure; Noise measurement; Scattering parameters; Temperature; Time measurement; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602940
