• DocumentCode
    3441635
  • Title

    Silicon solar cells with monolithic rare-earth oxide upconversion layer

  • Author

    Sewell, Richard H. ; Clark, Andrew ; Smith, Robin ; Semans, Scott ; Jamora, Aleta ; Vosters, Gary

  • Author_Institution
    Translucent Inc., Palo Alto, CA, USA
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    A ternary rare-earth oxide (REO) up-conversion layer was deposited on monocrystalline thin film solar cells to demonstrate up-conversion of sub-band-gap solar radiation into the spectral range of silicon. Laser radiation from 1520 nm to 1560 nm was shown to generate an additional photocurrent in the underlying silicon solar cell. Through combinations of rare-earth ions, portions of the sub-band-gap solar spectrum can conceivably be upconverted to light of shorter wavelength, thereby increasing the efficiency of existing silicon solar cells. The REO films form a stable optically active dielectric that is compatible with standard semiconductor processing techniques.
  • Keywords
    elemental semiconductors; energy gap; photoconductivity; semiconductor thin films; silicon; solar cells; thin film devices; Si; monocrystalline thin film solar cells; photocurrent; rare-earth ions; stable optically active dielectric; sub-band-gap solar radiation up-conversion; sub-band-gap solar spectrum; ternary rare-earth oxide up-conversion layer; wavelength 1520 nm to 1560 nm; Optical films; Particle beam optics; Photoconductivity; Photovoltaic cells; Semiconductor films; Semiconductor thin films; Silicon; Solar power generation; Solar radiation; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411287
  • Filename
    5411287