DocumentCode :
3441635
Title :
Silicon solar cells with monolithic rare-earth oxide upconversion layer
Author :
Sewell, Richard H. ; Clark, Andrew ; Smith, Robin ; Semans, Scott ; Jamora, Aleta ; Vosters, Gary
Author_Institution :
Translucent Inc., Palo Alto, CA, USA
fYear :
2009
fDate :
7-12 June 2009
Abstract :
A ternary rare-earth oxide (REO) up-conversion layer was deposited on monocrystalline thin film solar cells to demonstrate up-conversion of sub-band-gap solar radiation into the spectral range of silicon. Laser radiation from 1520 nm to 1560 nm was shown to generate an additional photocurrent in the underlying silicon solar cell. Through combinations of rare-earth ions, portions of the sub-band-gap solar spectrum can conceivably be upconverted to light of shorter wavelength, thereby increasing the efficiency of existing silicon solar cells. The REO films form a stable optically active dielectric that is compatible with standard semiconductor processing techniques.
Keywords :
elemental semiconductors; energy gap; photoconductivity; semiconductor thin films; silicon; solar cells; thin film devices; Si; monocrystalline thin film solar cells; photocurrent; rare-earth ions; stable optically active dielectric; sub-band-gap solar radiation up-conversion; sub-band-gap solar spectrum; ternary rare-earth oxide up-conversion layer; wavelength 1520 nm to 1560 nm; Optical films; Particle beam optics; Photoconductivity; Photovoltaic cells; Semiconductor films; Semiconductor thin films; Silicon; Solar power generation; Solar radiation; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411287
Filename :
5411287
Link To Document :
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