Title :
45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process
Author :
Yu, S. ; Lu, J.-P. ; Mehrad, F. ; Bu, H. ; Shanware, A. ; Ramin, M. ; Pas, M. ; Visokay, M.R. ; Vitale, S. ; Yang, S.-H. ; Jiang, P. ; Hall, L. ; Montgomery, C. ; Obeng, Y. ; Bowen, C. ; Hong, H. ; Tran, J. ; Chapman, R. ; Bushman, S. ; Machala, C. ; Blat
Author_Institution :
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX
Abstract :
Bulk CMOS transistors with NiSi fully silicided gate electrodes (FUSI) on plasma nitrided oxide gate dielectric are fabricated by a novel integration method using CoSi2 as Ni barrier layer on active regions. Performance improvements of 15% (NMOS) and 31% (PMOS) are demonstrated over poly gate electrode transistors at 35 nm gate length. FUSI impact on gate leakage, inversion oxide thickness, VT variation, and gate oxide reliability are compared to poly gate devices. Dopant modulation of NiSi FUSI gate electrode work-function are studied
Keywords :
CMOS integrated circuits; MOSFET; cobalt compounds; dielectric materials; nickel compounds; semiconductor device manufacture; semiconductor doping; work function; 45 nm; CoSi2; FUSI; NMOS; Ni barrier layer; NiSi; PMOS; dopant modulation; fully silicided gate electrodes; gate leakage; gate oxide reliability; inversion oxide thickness; nitrided oxide bulk CMOS transistors; oxide gate dielectric; poly gate devices; polygate electrode transistors; CMOS process; CMOS technology; Electrodes; Etching; Gate leakage; MOS devices; Nickel; Plasma stability; Silicidation; Silicides;
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-9268-X
DOI :
10.1109/IEDM.2005.1609312
