Author :
Ohta, Hitoyoshi ; Kim, Youngjae ; Shimamune, Y. ; Sakuma, Takuto ; Hatada, Akiyoshi ; Katakami, A. ; Soeda, Takeshi ; Kawamura, Kei ; Kokura, H. ; Morioka, Hiroshi ; Watanabe, Toshio ; Hayami, J.O.Y. ; Ogura, J. ; Tajima, Michio ; Mori, Takayoshi ; Tamura
Abstract :
Aggressively scaled 30 nm gate CMOSFETs for 45 nm node is reported. We successfully improved the short channel effect with keeping a high drive current by Sigma shaped SiGe-source/drain (SiGe-SD) structure. Both hole mobility and source/drain extension (SDE) resistance in pMOSFET are improved by combination of optimized Sigma shaped SiGe-SD and slit-embedded B-doped SiGe-SDE. Electron and hole mobility enhancement can be balanced by aggressively scaled poly-Si pMOS gate height and SiN capped shallow trench isolation (STI) with SiN liner. A high performance 30 nm/33 nm gate nMOSFET and pMOSFET were demonstrated with a drive currents of 937/1000 muA/mum and 490/545 muA/mum at Vd=1.0 V / Ioff=100 nA/mum, respectively
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; boron; electron mobility; hole mobility; semiconductor doping; silicon compounds; 1.0 V; 30 nm; 45 nm; B:SiGe; CMOSFET performance; SDE resistance; SiGe; SiN; bulk CMOS technology; electron mobility enhancement; hole mobility enhancement; nMOSFET; pMOSFET; poly-Si pMOS gate height; shallow trench isolation; short channel effect; source/drain extension resistance; CMOS technology; CMOSFETs; Dry etching; Germanium silicon alloys; MOSFET circuits; Silicides; Silicon compounds; Silicon germanium; Stress control; Tensile stress;
